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1

Microstructure of boron-doped silicon layers prepared by low pressure chemical vapour deposition

D. Bielle-Daspet, F. Mansour-Bahloul, A. Martinez, B. Pieraggi, M.J. David, B. De Mauduit, A. Oustry, R. Carles, G. Landa, F. Ajustron, A. Mazel, P. Riboulet

Journal:

Thin Solid Films

Année:

1987

Langue:

english

Fichier:

PDF, 1.34 MB

english, 1987

2

Structural and technological properties of heavily in situ phosphorus-doped low pressure chemically vapour deposited silicon films

D. Bielle-Daspet, L. Mercadere, M. Boukezzata, B. Pieraggi, B. de Mauduit

Journal:

Thin Solid Films

Année:

1989

Langue:

english

Fichier:

PDF, 1.17 MB

english, 1989

3

Feasibility and electrical properties of 600 °C thermal silica layers for thin film transistor applications

G. Sarrabayrouse, P. Taurines, E. Scheid, D. Bielle-Daspet, A. Martinez

Journal:

Thin Solid Films

Année:

1991

Langue:

english

Fichier:

PDF, 497 KB

english, 1991

4

Material and electronic properties of boron-doped silicon films deposited from SiH4BCl3N2 mixtures in an industrial low pressure chemical vapour deposition furnace

D. Bielle-Daspet, E. Scheid, C. Azzaro, B. De Mauduit, B. Pieraggi

Journal:

Thin Solid Films

Année:

1991

Langue:

english

Fichier:

PDF, 1.94 MB

english, 1991

5

Changes in lifetime and diffusion length due to the electron and proton bombardment of silicon solar cells

D. Bielle-Daspet, L. Castaner, G. Gasset, M. Benzohra

Journal:

Année:

1980

Langue:

english

Fichier:

PDF, 641 KB

english, 1980

6

Conductivity of boron-implanted polycrystalline thin silicon films

F. Mansour, M. Bouchemat, M. Boukezzata, N.H. Touidjen, D. Bielle-Daspet, K. Mirouh

Journal:

Thin Solid Films

Année:

1995

Langue:

english

Fichier:

PDF, 554 KB

english, 1995

7

A 3-Dimensional Temperature Uniformity Model for a Rapid Thermal Processing Furnace

Henda, R., Scheid, E., Bielle-Daspet, D.

Journal:

MRS Proceedings

Année:

1994

Langue:

english

Fichier:

PDF, 366 KB

english, 1994

8

Structural and Electrical Changes in Polycrystalline Silicon Thin Films That Are Heavily In Situ Boron-Doped and Thermally Oxidized with Dry Oxygen

Dr. Messaoud Boukezzata, Dr. Boubekeur Birouk, Dr. Farida Mansour, Dr. Daniéle Bielle-Daspet

Journal:

Chemical Vapor Deposition

Année:

1997

Langue:

english

Fichier:

PDF, 1.19 MB

english, 1997

9

Effective recombination levels in n- and p-type silicon irradiated by 4·5 MeV electrons

Danielle Bielle-Daspet

Journal:

Solid-State Electronics

Année:

1973

Langue:

english

Fichier:

PDF, 1.68 MB

english, 1973

10

Measurement of carrier lifetime in the base of bipolar transistors by means of transient secondary photocurrents

Danielle Bielle-Daspet, Mohammed Benzohra, Yan Gervais de Lafond

Journal:

Solid-State Electronics

Année:

1978

Langue:

english

Fichier:

PDF, 263 KB

english, 1978

11

Bulk carrier lifetime measurement from transient diffusion photocurrent in semiconductor diodes

Danielle M. Bielle-Daspet, Gilbert D. Gasset

Journal:

Solid-State Electronics

Année:

1978

Langue:

english

Fichier:

PDF, 631 KB

english, 1978

12

Hubbard's sub-band conduction in Si poly-SiO2 transition layers

M. Ada-Hanifi, J. Sicart, J.L. Robert, D. Bielle-Daspet

Journal:

Solid-State Electronics

Année:

1987

Langue:

english

Fichier:

PDF, 515 KB

english, 1987

13

Silicon deposited by low pressure chemical vapour deposition from Si2H6: experiments, modelling and properties

E. Scheid, J.J. Pedroviejo, P. Duverneuil, M. Gueye, J. Samitier, A. El Hassani, D. Bielle-Daspet

Journal:

Materials Science and Engineering: B

Année:

1993

Langue:

english

Fichier:

PDF, 444 KB

english, 1993

14

Second-oxidation properties of thin polysilicon films grown by LPCVD and heavily in situ boron-doped

M. Boukezzata, B. Birouk, D. Bielle-Daspet

Journal:

Thin Solid Films

Année:

1998

Langue:

english

Fichier:

PDF, 578 KB

english, 1998

15

Influence of injection rate on carrier lifetime degradation in p-type silicon irradiated by 4.5 MeV electrons

D. Bielle-Daspet, M. Pouget

Journal:

Nuclear Instruments and Methods

Année:

1971

Langue:

english

Fichier:

PDF, 177 KB

english, 1971

16

Characteristics of the thermal oxidation of heavily boron-doped polycrystalline silicon thin films

M. Boukezzata, D. Bielle-Daspet, G. Sarrabayrouse, F. Mansour

Journal:

Thin Solid Films

Année:

1996

Langue:

english

Fichier:

PDF, 1.37 MB

english, 1996

17

Crystallization of amorphous thin LPCVD Si films: “in situ” TEM measurement of nucleation and grain growth rates

J.P Guillemet, B de Mauduit, B Pieraggi, D Bielle-Daspet, E Scheid

Journal:

Materials Science and Engineering: A

Année:

1993

Langue:

english

Fichier:

PDF, 575 KB

english, 1993

18

Effects of Electron Irradiation and Light Injection on the Performance of Silicon Solar Cells

Roux, M., Bernard, J., Reulet, R., Bielle-Daspet, D., Lagouin, M., Castaner-Munoz, L., Bourgoin, J., Crabb, R. L.

Journal:

IEEE Transactions on Nuclear Science

Année:

1983

Langue:

english

Fichier:

PDF, 1.23 MB

english, 1983

19

Influence of rapid thermal and low temperature processing on the electrical properties of polysilicon thin film transistors

Campo, E., Scheid, E., Bielle-Daspet, D., Guillemet, J.-P.

Journal:

IEEE Transactions on Semiconductor Manufacturing

Année:

1995

Langue:

english

Fichier:

PDF, 584 KB

english, 1995

20

Investigation of the thermal behavior of a RTP furnace

Henda, R., Scheid, E., Bielle-Daspet, D.

Journal:

IEEE Transactions on Semiconductor Manufacturing

Année:

1995

Langue:

english

Fichier:

PDF, 463 KB

english, 1995

21

Electron induced degradation and recovery under space conditions of lithium-doped silicon solar cells

Roux, M., Reulet, R., Bernard, J., Stievenard, D., Bielle-Daspet, D., Lagouin, M., Castaner, L., Canigueral, J.

Journal:

Radiation Effects

Année:

1984

Langue:

english

Fichier:

PDF, 544 KB

english, 1984

22

Super Large Grain Polycrystalline Silicon Obtained from Pyrolysis of Si 2 H 6 and Annealing

Scheid, Emmanuel, Mauduit, Bernadette De, Taurines, Philippe, Bielle-Daspet, Danielle

Journal:

Japanese Journal of Applied Physics

Année:

1990

Fichier:

PDF, 1.91 MB

1990

23

Recombination Activity in Directly Bonded High Resistivity Silicon Wafers Measured by the Photoconductance Decay Method

G. Sarrabayrouse, P. Lecerf, D. Bielle-daspet

Année:

1999

Langue:

english

Fichier:

PDF, 418 KB

english, 1999

24

Characterization of sub-micrometre silicon films (Si-LPCVD) heavily in situ boron-doped and submitted to treatments of dry oxidation

A t-Kaki, A, Boulakroune, M, Boukezzata, M, Berrabah, M, Djahli, F, Bellatreche, M S, Bielle-Daspet, D

Journal:

Semiconductor Science and Technology

Année:

2002

Langue:

english

Fichier:

PDF, 263 KB

english, 2002

25

Poly-Si Thin Film Transistors Fabricated with Rapid Thermal Processing

Campo, E., Pedroviejo, J.J., Scheid, E., Bielle-Daspet, D., Messaoud, A. Yahia, Sarrabayrouse, G., Martinez, A.

Journal:

MRS Proceedings

Année:

1993

Langue:

english

Fichier:

PDF, 976 KB

english, 1993

26

SPIE Proceedings [SPIE International Conference on Microelectronics - Warsaw, Poland (Monday 21 September 1992)] International Conference of Microelectronics: Microelectronics '92 - 600°C thermal oxidation of amorphous LPCVD silicon for thin film transistor application

Sarrabayrouse, G., Taurines, P., Scheid, E., Bielle-Daspet, D., de Mauduit, B., Guillemet, J. P., Martinez, A., Sowinski, Andrzej, Grzybowski, Jan, Kucharski, Witold T., Romaniuk, Ryszard S.

Année:

1992

Langue:

english

Fichier:

PDF, 457 KB

english, 1992

27

MINORITY CARRIER LIFETIME AND POTENTIAL BARRIER HEIGHT IN POLYCRYSTALLINE SILICON : EFFECTS OF LOW TEMPERATURE ANNEALINGS AND NEUTRON IRRADIATION

Bielle-Daspet, D., Roux, M., Farah, J.

Journal:

Le Journal de Physique Colloques

Année:

1982

Langue:

english

Fichier:

PDF, 248 KB

english, 1982

28

Carrier lifetime measurements from transient electrical photoresponses

Bielle-Daspet, D.M., Johan, A.M., Espioussas, F.

Journal:

Revue de Physique Appliquée

Année:

1980

Fichier:

PDF, 1.76 MB

1980

29

Carrier lifetime measurements from transient electrical photoresponses

Bielle-Daspet, D.M., Johan, A.M., Espioussas, F.

Journal:

Revue de Physique Appliquée

Année:

1980

Fichier:

PDF, 1.76 MB

1980

30

SILICON DEPOSITION FROM DISILANE : EXPERIMENTAL STUDY AND MODELLING

GUEYE, M., SCHEID, E., TAURINES, P., DUVERNEUIL, P., BIELLE-DASPET, D., COUDERC, J. P.

Journal:

Journal de Physique IV (Proceedings) /Le Journal de Physique IV

Année:

1991

Fichier:

PDF, 1.42 MB

1991